学術雑誌論文 Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam

長谷川, 登  ,  錦野, 将元  ,  乙部, 智仁

202pp.321 - 326 , 2018-04
ISSN:0930-8989
内容記述
The authors investigate a low-fluence laser processing system with a femtosecond double-pulse beam and surface excitation of a power semiconductor wafer. The double-pulse laser processing method enables a semiconductor surface to be processed at a lower fluence and prevents penetration damage of the processed surface. The first pulse of the double beam is considered to have a role in exciting the semiconductor surface to increase the efficiency of light energy absorption. In this report, to verify the feasibility of low-fluence processing, we measure the damage threshold in the low-fluence ablation process.

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