学術雑誌論文 Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

Nagy, R.  ,  Widmann, M.  ,  Niethammer, M.  ,  D., B. R. Dasari  ,  Gerhardt, I.  ,  Ö., O. Soykal  ,  Radulaski, M.  ,  Ohshima, Takeshi  ,  J., Vučković  ,  T. Son, N.  ,  G. Ivanov, I.  ,  E. Economou, S.  ,  Bonato, C.  ,  S.-Y., Lee  ,  Jörg, Wrachtrup

内容記述
Various defect centers have displayed promise as either quantum applications, single photon emitters or light-matter interfaces. However, the search for an ideal defect with multifunctional ability still remains as open questions. Here, we study the dichroic silicon vacancies in silicon carbide that feature two well-distinguishable zero-phonon lines (ZPLs) and analyze the quantum properties in their optical emission and spin control. It is demonstrated that this center combines 40% optical emission into the ZPLs showing the contrasting difference in optical properties with varying temperature and polarization, and a 100% increase in the fluorescence intensity upon the spin resonance, and long spin coherence time up to 0.6 ms. These results indicate this defect center as a promising system for spin-based quantum applications.

このアイテムのアクセス数:  回

その他の情報