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Determination of specific ion positions of Cr3+ and O2− in Cr2O3 thin films and their relationship to exchange anisotropy at Co/Cr2O3 interfacesDetermination of specific ion positions of Cr3+ and O2− in Cr2O3 thin films and their relationship to exchange anisotropy at Co/Cr2O3 interfaces |
"/Shiratsuchi, Yu/"Shiratsuchi, Yu ,
"/Nakano, Yuuta/"Nakano, Yuuta ,
"/Inami, Nobuhito/"Inami, Nobuhito ,
"/Ueno, Tetsuro/"Ueno, Tetsuro ,
"/Ono, Kanta/"Ono, Kanta ,
"/Kumai, Reiji/"Kumai, Reiji ,
"/Sagayama, Ryoko/"Sagayama, Ryoko ,
"/Nakatani, Ryoichi/"Nakatani, Ryoichi
123pp.103903-1
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103903-7 , 2018-03 , AIP Publishing
Description
The structures of antiferromagnetic Cr2O3(0001) thin films with perpendicular exchange bias were investigated using reflection high-energy electron diffraction, X-ray reflectivity, and synchrotron X-ray diffraction. We mainly investigated the specific ion positions of Cr3+ and O2− in the corundum structure and discussed their relationship to the magnetic anisotropy of Cr2O3. The Cr2O3(0001) thin film grown on a Pt(111) buffer layer exhibited a perpendicular exchange anisotropy density of 0.42 mJ/m2, in which the Cr3+ position is the primary factor in the enhancement of magnetic anisotropy due to dipolar-interaction. In contrast, the single-crystalline Cr2O3(0001) film grown on a α-Al2O3(0001) substrate featured a low exchange magnetic anisotropy of 0.098 mJ/m2. In this film, the Cr3+ position parameter is an insignificant factor, leading to low magnetic anisotropy. The O2− ion position also differs between the two types of films, which can affect both the magnetic anisotropy energy originating from fine structures and the magneto-electric properties of Cr2O3.
