Journal Article Radiation hardness of b-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

Hoi Wong, Man  ,  武山, 昭憲  ,  牧野, 高紘  ,  大島, 武  ,  Sasaki, Kohei  ,  Kuramata, Akito  ,  Yamakoshi, Shigenobu

112 ( 023503 )  , pp.023503-1 - 023503-5 , 2018-05 , American institute of physics
The effects of ionizing radiation on b-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy(SiO2) was demonstratedfor the bulk Ga2O3 channel by virtue of weak radiation effects on the MOSFETs’ output current and threshold voltage. The MOSFETs remained functional with insignificant hysteresis in their transfercharacteristics after exposure to the maximum cumulative dose. Despite the intrinsic radiation hardness of Ga2O3, radiation-induced gate leakage and drain current dispersion ascribed respectively todielectric damage and interface charge trapping were found to limit the overall radiation hardness of these devices.

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