||Defect Characterization of III-V Quantum Structure Solar Cells Using Photo-Induced Current Transient Spectroscopy
佐藤, 真一郎 ,
Sugaya, Takeyoshi ,
Nakamura, TetsuyaOhshima, Takeshi
Proceedings of the 44th IEEE Photovoltaic Specialists Conference
2018-02 , IEEE
Radiation degradation characterization method for solar cells embedded with quantum dot (QD) layers using Photo-Induced Current Transient Spectroscopy (PICTS) is proposed in this study. Contrary to Deep Level Transient Spectroscopy (DLTS), PICTS is capable of comparing directly photo-current degradation to radiation induced defects for p-i-n structure solar cells, which is a basic structure of QD solar cells. GaAs p-i-n solar cells with 50 In0.4Ga0.6As QD layers are fabricated by Molecular Beam Epitaxy (MBE) and the radiation degradation is investigated by PICTS measurement. The current-voltage characteristics under AM0, 1 sun condition is also investigated and the degradation of solar cell performance is discussed by comparison to defect levels obtained from PICTS spectra. GaAs p-i-n solar cells without QDs are also investigated for comparison.