学術雑誌論文 Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction

Suzuki, Hidetoshi  ,  佐々木, 拓生  ,  高橋, 正光  ,  Ohshita, Yoshio  ,  Kojima, Nobuaki  ,  Kamiya, Itaru  ,  Fukuyama, Atsuhiko  ,  Ikari, Tetsuo  ,  Yamaguchi, Masafumi

56 ( 8S2 )  , pp.08MA06-1 - 08MA06-4 , 2017-08 , IOP science
内容記述
The effect of substrate orientation on strain relaxation mechanisms of an InGaAs layer grown on vicinal GaAs substrates was investigated byin situ X-ray diffraction (XRD). The crystallographic tilt and indium segregation in the InGaAs layer were altered depending on the miscut directionand angle. In the case of the substrate tilted 6° toward the [110] direction, one type of misfit dislocations was formed preferentially rather than othertypes, especially in the rapid relaxation phase. While in the case of the substrate tilted 6° toward the [1-10] direction, no anisotropies duringrelaxation were observed. The present finding indicates that the appropriate use of vicinal substrates may lead to a novel method of improving thecrystal quality of heterolayers.

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