||Direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays
M. Tex, David ,
Nakamura, Tetsuya ,
Imaizumi, MitsuruOhshima, Takeshi
The analysis of the subcell performance is crucial to understand the device physics and achieve optimized designs of triple junction solar cells which is a main stream of space solar cells now. Radiation-induced damage of inverted grown InGaP/GaAs/InGaAs triple-junction solar cells for various electron fluences are characterized using conventional current-voltage measurements and time-resolved photoluminescence. The conversion efficiencies of the entire device before and after damage are measured with current-voltage curves and compared with the efficiencies predicted from the time-resolved method. Using the time-resolved data, the change in the carrier dynamics in the subcells is discussed.