Journal Article Creation and Functionalization of Defects in SiC by Proton Beam Writing

Ohshima, Takeshi  ,  Honda, Tomoya  ,  Onoda, Shinobu  ,  Makino, Takahiro  ,  Haruyama, Moriyoshi  ,  Kamiya, Tomihiro  ,  Sato, Takahiro  ,  Hijikata, Yasuto  ,  Kada, Wataru  ,  Hanaizumi, Osamu  ,  Lohrmann, A.  ,  R. Klein, J.  ,  C. Johnson, B.  ,  C. McCallum, J.  ,  Castelletto, S.  ,  C. Gibson, B.  ,  Kraus, H.  ,  Dyakonov, V.  ,  V. Astakhov, G.

897pp.233 - 237 , 2017-06
Proton beam writing (PBW) a with 1.7 MeV proton micro beam was carried out into high purity semi-insulating 4H-SiC bulk substrates. Luminescent defects created in the SiC were investigated. A peak around 900 nm associated with the silicon vacancy was observed for the irradiated SiC without any post-implantation annealing. The overall depth profile of photon counts detected from irradiatedareas is in good agreement with simulated vacancy depth profile. Since the silicon vacancy is known as a single photon source with a spin that can be controlled at room temperature, PBW is expected to be a useful tool to fabricate spin qubits.

Number of accesses :  

Other information