Journal Article Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

Radulaski, Marina  ,  Widmann, Matthias  ,  Niethammer, Matthias  ,  Linda Zhang, Jingyuan  ,  Sang-Yun, Lee  ,  Rendler, Torsten  ,  G. Lagoudakis, Konstantinos  ,  Tien Son, Nguyen  ,  Janzeen, Erik  ,  Ohshima, Takeshi  ,  Wrachtrup, Jorg  ,  Vuckovicc, Jelena

17 ( 3 )  , pp.1782 - 1786 , 2017-02 , American Chemical Society
Description
A scalable array of nanopillars incorporating single silicon vacancy centers is developed in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electrons to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400−1400 nm diameters. High collection efficiency of up to 22 kcounts/s optical saturation rates was observed from a single silicon vacancy center while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits.

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