学術雑誌論文 Charge state stabilization of shallow nitrogen vacancy centers in diamond by oxygen surface modification

Yamano, Hayate  ,  Kawai, Sora  ,  Kanami Kato  ,  Kageura, Taisuke  ,  Inaba, Masafumi  ,  Okada, Takuma  ,  Higashimata, Itaru  ,  Haruyama, Moriyoshi  ,  Tanii, Takashi  ,  Yamada, Keisuke  ,  Onoda, Shinobu  ,  Kada, Wataru  ,  Osamu Hanaizumi  ,  Teraji, Tokuyuki  ,  Isoya, Junichi  ,  Kawarada, Hiroshi

56 ( 4S )  , pp.04CK08-1 - 04CK08-7 , 2017-03
内容記述
We investigated the charge state stability and coherence properties of near-surface single nitrogen vacancy (NV) centers in 12C-enriched diamondfor potential use in nanoscale magnetic field sensing applications. The stability of charge states in negatively charged NV centers (NV%) wasevaluated using one of the pulsed optically detected magnetic resonance measurements, Rabi oscillation measurements. During the accumulationof Rabi oscillations, an unstable shallow NV% was converted to a neutral state. As a result, the contrast of Rabi oscillations degraded, depending oncharge state stability. We stabilized the NV% state of very shallow NV centers (>2.6 + 1.1 nm from the surface) created by 1.2 keV nitrogen ionimplantation by diamond surface modification, UV/ozone exposure, and oxygen annealing. This improvement indicates that we can suppress theupward surface band bending and surface potential fluctuations through Fermi level pinning originating from oxygen-terminated diamond surfaces.

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