学術雑誌論文 Optimum structures for gamma-ray radiation resistant SiC-MOSFETs

Mitomo, Satoshi  ,  Matsuda, Takuma  ,  Murata, Koichi  ,  Yokoseki, Takashi  ,  Makino, Takahiro  ,  Takeyama, Akinori  ,  Onoda, Shinobu  ,  Oshima, Takeshi  ,  Okubo, Shuichi  ,  Tanaka, Yuki  ,  Kandori, Mikio  ,  Yoshie, Toru  ,  Hijikata, Yasuto

214 ( 4 )  , pp.1600425-1 - 1600425-7 , 2017-02 , WILEY-VCH Verlag GmbH & Co.
内容記述
In order to develop highly radiation-tolerant SiC MOSFETs, we investigated the dependence of the gamma-ray radiation response on the gate oxide thickness and nitridation processes, used for oxide growth and p-well implantation. SiC MOSFETs with a thick gate oxide (60 nm) showed a rapid decrease in the threshold voltage shift ⊿Vth of more than 400 kGy, and transitioned to the normally-on state at lower doses than those with a thin gate oxide (35 nm). The MOSFETs with gate oxides treated with lower concentrations of N2O (10%) demonstrated a higher radiation tolerance (⊿Vth, channel mobility, and subthreshold swing) than with a 100% N2O treatment. The MOSFETs with more p-well implantation steps (three steps) showed a smaller negative shift of the threshold voltage relative to those implanted with two steps.

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