||Nitride-MBE system for in situ synchrotron X-ray measurements
佐々木, 拓生 ,
Ishikawa, Fumitaro ,
Yamaguchi, Tomohiro高橋, 正光
JAPANESE JOURNAL OF APPLIED PHYSICS
, p.05FB05 , 2017-02 , IOP Publishing
A molecular beam epitaxy (MBE) chamber dedicated to nitride growth was developed at the synchrotron radiation facility SPring-8. This chamberhas two beryllium windows for incident and outgoing X-rays, and is directly connected to an X-ray diffractometer, enabling in situ synchrotron X-raymeasurements during the nitride growth. Experimental results on initial growth dynamics in GaN/SiC, AlN/SiC, and InN/GaN heteroepitaxy werepresented. We achieved high-speed and high-sensitivity reciprocal space mapping with a thickness resolution of atomic-layer scale. This in situmeasurement using the high-brilliance synchrotron light source will be useful for evaluating structural variations in the initial growth stage of nitridesemiconductors.