学術雑誌論文 Growth of single-phase nanostructured Er2O3 thin films on Si (100) by ion beam sputter deposition

Mao, Wei  ,  Fujita, Masaya  ,  Chikada, Takumi  ,  Yamaguchi, Kenji  ,  Suzuki, Akihiro  ,  Terai, Takayuki  ,  Matsuzaki, Hiroyuki

283pp.241 - 246 , 2015-12 , Elsevier B.V.
内容記述
Single-phase nanocrystalline thin films of Er2O3 (440) was fabricated on Si (100) substrates by means of ion beam sputter deposition method for the first time, at 973 K and in-situ thermal annealing at 1,023 K. Er silicides formed during the deposition were eliminated via the annealing, which resulted in the single phase and the smooth surface of the Er2O3 thin films. The epitaxial relationship between Si (100) and Er2O3 (110) is clarified by X-ray diffraction and reflection high energy electron diffraction (RHEED).

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