Journal Article The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs

Lourenco, Nelson E.  ,  Fleetwood, Zachary E.  ,  Ildefonso, Adrian  ,  Wachter, Mason T.  ,  Roche, Nicolas J.-H.  ,  Khachatrian, Ani  ,  McMorrow, Dale  ,  Buchner, Stephen P.  ,  Warner, Jeffrey H.  ,  Itsuji, Hiroaki  ,  Kobayashi, Daisuke  ,  Hirose, Kazuyuki  ,  Paki, Pauline  ,  Raman, Ashok  ,  Cressler, John D.  ,  Lourenco, Nelson E.  ,  Fleetwood, Zachary E.  ,  Ildefonso, Adrian  ,  Wachter, Mason T.  ,  Roche, Nicolas J.-H.  ,  Khachatrian, Ani  ,  McMorrow, Dale  ,  Buchner, Stephen P.  ,  Warner, Jeffrey H.  ,  井辻, 宏章  ,  小林, 大輔  ,  廣瀬, 和之  ,  Paki, Pauline  ,  Raman, Ashok  ,  Cressler, John D.

64 ( 1 )  , pp.406 - 414 , 2017-01 , Institute of Electrical and Electronics Engineers
ISSN:0018-9499
NCID:AA00667999
Description
著者人数: 15名
Accepted: 2016-11-08

Number of accesses :  

Other information