Departmental Bulletin Paper Silicide Synthesis by Fe+ Implantation in Si Substrates

Hoshino, Yasushi  ,  星野, 靖  ,  Yachida, Gosuke  ,  Yoneda, Tomoaki  ,  Nakata, Jyoji  ,  中田, 穣治

26pp.7 - 12 , 2015-06-30 , 神奈川大学総合理学研究所
We performed Fe ion implantation in Si(001) substrates at room temperature with fluences of 1×1016, 2×1016, 5×1016, and 1×1017 cm-2 followed by annealing treatments at 900, 950 and 1000℃ for 1 h, aiming at the characterization and optimization of the process to synthesize β-FeSi2. The elemental depth profiles and reaction products were quantitatively investigated by Rutherford backscattering (RBS) and Raman spectroscopy. It was clarified by RBS analysis of as-implanted samples that the implanted Fe atoms are mostly located around the depth predicted by Monte Carlo simulation. We could not observe β-FeSi2-derived componentsin the Raman spectra. After annealed at 900℃, Fe silicide compounds are segregatedon the surface. The elemental composition depends on ion fluences and the atomic concentration of Fe for the highest-dosed sample with 1×1017 cm-2 is found to reach ~ 25%. Strong Raman peaks corresponding to β-FeSi2 are observed in all prepared samples. The depth profile of Fe is markedly changed for the samples postannealed above 950℃. Raman signals become much weaker with increasing ion fluences and postannealing temperatures. Under the present experimental conditions, using Raman analysis low-dose implantation around 2×1016 cm-2 followed by annealing at low temperatures was suggested to be effective for the synthesis of β-FeSi2 crystals.
Full-length PaperBy a grant from Reserch Institute for Integrated Science, kanagawa University

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