Journal Article Lasing characteristics of 1.3-µm npn-AlGaInAs transistor-laser with narrower-bandgap p-GaInAsP base layer on semi-insulating InP substrate

吉冨, 翔一  ,  Yoshitomi, Shoichi  ,  只野, 翔太郎  ,  Tadano, Shotaro  ,  山中, 健太郎  ,  Yamanaka, Kentarou  ,  西山, 伸彦  ,  Nishiyama, Nobuhiko  ,  荒井, 滋久  ,  ARAI, SHIGEHISA

Number of accesses :  

Other information