||Room temperature synthesis of GaN driven by kinetic energy beyond the limit of thermodynamics
Room temperature synthesis of GaN driven by kinetic energy beyond the limit of thermodynamics
今岡, 享稔 ,
Imaoka, Takane ,
山元, 公寿Yamamoto, Kimihisa
ACS Appl. Mater. Interfaces
The nitridation reaction is significantly important to utilize the unique properties of nitrides and nitrogen-doped materials. However, nitridation generally requires a high temperature or highly reactive reagents (often explosive) because the energies of N-N bond cleavage and nitrogen anion formation (N3-) are very high. We demonstrate the first room-temperature synthesis of GaN directly from GaCl3 by nanoscale atom exchange reaction. Nonequilibrium nitrogen molecules with very high translational energy were used as a chemically stable and safe nitrogen source. The irradiation of molecular nitrogen to the desired reaction area successfully provided a gallium nitride (GaN) nanosheet that exhibited a typical photoluminescence spectrum. Because this process retains the target substrate room temperature and does not involve any photon nor charged ion, it allows damage-less synthesis of the semiconducting metal nitrides, even directly on plastic substrates such as polyethylene terephthalate (PET).