学術雑誌論文 3D/2.5D-IC TSVに向けた低温成膜SiNxの特性評価

中村, 友二  ,  Nakamura, Tomoji

135 ( No. 7 )  , pp.733 - 738 , 2015-07 , The Institute of Electrical Engineers of Japan
ISSN:0385-4221
内容記述
For realizing highly reliable Cu wiring in 3D/2.5D-IC, SiNx films formed by the reactive sputtering deposition and the plasma-enhanced chemical vapor deposition (PECVD) at low substrate temperatures are characterized and compared by use of X-ray reflectivity (XRR), X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared spectroscopy (FT-IR). The film density obtained by XRR shows clear difference between the sputtering and PECVD films. Si-H bonding concentrations obtained by analyzing FT-IR spectra show good correlations with the film densities independent of deposition methods and conditions. Lower density properties of PECVD films could be attributed to higher density of residual Si-H bonds in the films.

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