Journal Article Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In–Ga–Zn–O thin-film transistors

井手, 啓介  ,  Ide, Keisuke  ,  菊池, 満帆  ,  Kikuchi, Mitsuho  ,  太田, 雅人  ,  Ota, Masato  ,  笹瀬, 雅人  ,  Sasase, Masato  ,  平松, 秀典  ,  hiramatsu, hidenori  ,  雲見, 日出也  ,  Kumomi, Hideya  ,  細野, 秀雄  ,  HOSONO, HIDEO  ,  神谷, 利夫  ,  KAMIYA, TOSHIO

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