Journal Article InGaP//GaAs//c-Si 3-junction solar cells employing spectrum-splitting system

滝口, 雄貴  ,  Takiguchi, Yuki  ,  Sichanugrist, Porponth  ,  小長井, 誠  ,  KONAGAI, MAKOTO

24 ( 7 )  , pp.1016 - 1023 , 2016-06 , John Wiley & Sons
In this work, we practically demonstrated spectrum-splitting approach for advances in efficiency of photovoltaic cells. Firstly, a-Si:H//c-Si 2-junction configuration was designed, which exhibited 24.4% efficiency with the spectrum splitting at 620 nm. Then, we improved the top cell property by employing InGaP cells instead of the a-Si:H, resulting in an achievement of efficiency about 28.8%. In addition, we constructed 3-junction spectrum-splitting system with two optical splitters, and GaAs solar cells as middle cell. This InGaP//GaAs//c-Si architecture was found to deliver 30.9% conversion efficiency. Our splitting system includes convex lenses for light concentration about 10 suns, which provided concentrated efficiency exceeding 33.0%. These results suggest that our demonstration of 3-junction spectrum-splitting approach can be a promising candidate for highly efficient photovoltaic technologies.

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