Journal Article Anisotropic effective mass approximation model to calculate multiple subband structures at wide-gap semiconductor surfaces: Application to accumulation layers of SrTiO3 and ZnO

湯川, 龍  ,  Yukawa, Ryu  ,  小澤, 健一  ,  OZAWA, KENICHI  ,  山本, 達  ,  Yamamoto, Susumu  ,  劉, 若亞  ,  Liu, Roya  ,  松田, 巌  ,  Matsuda, Iwao

641pp.224 - 230 , 2015-07 , Elsevier B.V.

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