Journal Article Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum disulfide field-effect transistors

川那子, 高暢  ,  Kawanago, Takamasa  ,  小田, 俊理  ,  ODA, SHUNRI

108pp.041605 - 5 , 2016-01

Number of accesses :  

Other information