Conference Paper Zn1-xMgxOバッファー層によるCu(In,Ga)S2薄膜太陽電池の変換効率改善

廣井, 誉  ,  Hiroi, Homare  ,  山田, 明  ,  YAMADA, AKIRA

2016-03 , The Japan Society of Applied Physics , 応用物理学会
Se-free Cu(In,Ga)S2 is a promising material for solar cells from an aspect of low-cost production because H2Se which is an expensive material can be removable. However, there is no remarkable progress in the field of Se-free Cu(In,Ga)S2 solar cells these days. Additionally, Se-free Cu(In,Ga)S2 solar cells have further two difficulties in mass-production. The one is KCN-etching process for absorbers and the other is CdS deposition for buffer layers. Based on these backgrounds, we tried fabricating Se-free Cu(In,Ga)S2 solar cells via KCN-free and Cd-free processes. As a result, the high performance was achieved on Se-free Cu(In,Ga)S2 solar cells. In this paper, we focused on the Cd-free buffer layer by using Zn1-xMgxO, and revealed the dependence of electrical parameters on Mg content of Zn1-xMgxO buffer layer for Se-free Cu(In,Ga)S2 solar cells. Furthermore, the latest result of our research on Se-free Cu(In,Ga)S2 solar cells will be shown at the conference.
SeフリーCu(In,Ga)S2は、カルコゲナイド系薄膜太陽電池の中でもH2Seガスを用いずに作製出来る為、将来的に低コスト化が見込まれる太陽電池材料として有望である。本件は、更なる低コスト化及び安全性向上の観点から、KCN及びCdを使用せずに作製したSeフリーCu(In,Ga)S2薄膜太陽電池に関する発表であり、今回、Zn1-xMgxO を用いたCdフリーバッファー層に焦点を当て、特にZn1-xMgxOバッファー層のMg量における電池パラメーターへの依存性が明らかとなった為報告する。

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