Previously, 14.0% efficiency on pure-sulfide CuInGaS2 single cell was reported by Solar Frontier K.K.. Regarding open circuit voltage, 960 mV was achieved. In this work, we tried the development of the puresulfide CuInGaS2 submodule via monolithic structure. For the fabrication, vacuum-based processes were used for a deposition of a Mo back electrode and a metal precursor. The pure-sulfide CuInGaS2 absorber layer was formed by a high-temperature annealing with sulfur containing gas. Then CdS buffer layer, intrinsic ZnO and InSnO window layers were deposited by chemical bath deposition and vacuum-based process, respectively. A monolithically integrated structure with seven series connections was introduced by laser and mechanical patterning. As a result, the efficiency of 13.2 % and the open-circuit voltage of 850mV on pure-sulfide CuInGaS2 thin-film submodule with anti-reflection coating has been achieved. It seems to be the first module of high performance pure-sulfide CuInGaS2 over 13.0% efficiency without KCN-etching treatment in the world.