Journal Article Temperature-dependent minority carrier lifetime of crystalline silicon wafers passivated by high quality amorphous silicon oxide

稲葉, 真宏  ,  Inaba, Masahiro  ,  轟, 宗一郎  ,  Todoroki, Soichiro  ,  中田, 和吉  ,  Nakada, Kazuyoshi  ,  宮島, 晋介  ,  Miyajima, Shinsuke

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We investigated the effects of annealing on the temperature-dependent minority carrier lifetime of a crystalline silicon wafer passivated by hydrogenated amorphous silicon oxide. The annealing significantly affects the lifetime and its temperature dependence. Our device simulations clearly indicate that valence band offset significantly affects the temperature dependence. We also found a slight increase in the interface defect density after annealing.

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