Journal Article Conducting Si-doped γ-Ga<sub>2</sub>O<sub>3</sub> epitaxial films grown by pulsed-laser deposition

大島, 孝仁  ,  OSHIMA, Takayoshi  ,  松山, 慶太朗  ,  Matsuyama, Keitarou  ,  吉松, 公平  ,  Yoshimatsu, Kohei  ,  大友, 明  ,  Ohtomo, Akira

421pp.23 - 26 , 2015-04 , Elsevier
We report structural, electrical, and optical properties of Si-doped γ-Ga2O3 films epitaxially grown on (100) MgAl2O4 substrate by pulsed-laser deposition. The γ-Ga2O3:Si films of a metastable spinel phase had neither secondary phase nor rotation domain. A highly doped film exhibited n-type conductivity with a carrier concentration of 1.8×1019 cm−3 and a Hall mobility of 1.6 cm2 V−1 s−1 at 300 K. Donor activation energy was estimated to be less than 7 meV from nearly temperature-independent transport properties down to 77 K. The successful impurity doping indicates that γ-Ga2O3 can be used as an n-type wide-band-gap semiconductor.

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