Conference Paper 平行デュアルレーザビーム法によるシリコンウェーハのバルクキャリア寿命評価技術

金田, 寛  ,  大村, 一郎

A steady-state distribution of free carriers is generated in the silicon wafer by irradiating the 1064-nm YAG laser beam. By measuring the behavior of refraction of another infrared laser beam caused by the generated free carriers, we derive the distribution of the generated free carriers, to finally obtain the diffusion length and lifetime of the free carriers.
電子デバイス/半導体電力変換 合同研究会, 九州工業大学 戸畑キャンパス, 2016-11-14/2016-11-15

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