Conference Paper IGBT ダブルゲート構造の提案とアクティブ・ホール注入制御:数値解析による低損失化の原理確認

原田, 翔平  ,  大村, 一郎  ,  附田, 正則

Description
Double gate IGBT is proposed and confirmed significant reduction of turn-off loss with TCAD simulation. Conventional IGBTs have a problem of large turn-off loss with stored carrier in N-base. The proposed structure declines carrier injection during turn-off by dynamic hole injection decrease with the collector side gate control.
電子デバイス/半導体電力変換 合同研究会, 10月29日-30日, 2015年, 長崎歴史文化博物館, 長崎県
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