Journal Article High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric

Fujii, Mami N.  ,  Ishikawa, Yasuaki  ,  Miwa, Kazumoto  ,  Okada, Hiromi  ,  Uraoka, Yukiharu  ,  Ono, Shimpei

2015-12-18 , Macmillan Publishers
The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

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