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MOCVD 法により形成した CeO2-SiO2複合酸化物薄膜の特性MOCVD 法により形成した CeO2-SiO2複合酸化物薄膜の特性AA12677220 |
"/古矢, 智也/"古矢, 智也
582017-03-31 , 法政大学大学院理工学・工学研究科
ISSN:21879923
NII書誌ID(NCID):AA12677220
内容記述
The compound oxide was deposited on p-type Si (100) substrates by pyrolytic MOCVD with the intermittent introduction of TEOS (TetraEthoxyOrthoSilicate) for 10 sec every 3, 5, or 10 min. No SiO2 interfacial layer was observed in the sample with TEOS introduction for 10 sec per 3 min. The amount of Si in the film with TEOS introduction for 10 sec per 3 min was higher than other sample. Cerium silicate formation in the film prepared with TEOS introduction was confirmed. The leakage current density was attributed to the band gap of the film. The relative dielectric constant ranged between 16.6 and 21.6 depending on the TEOS introductioninterval.Key Words : high-k, MOCVD, CeO2, SiO2
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http://repo.lib.hosei.ac.jp/bitstream/10114/13547/1/15R3134.pdf
