紀要論文 自立 GaN 基板上縦型 p-n 接合 GaN ダイオード形成に関する研究

柘植, 博史

582017-03-31 , 法政大学大学院紀要理工学・工学研究科編
ISSN:21879923
内容記述
Mg ion implanted layers on free-standing GaN substrate were evaluated. Photoluminescence (PL) spectroscopy and I-V characteristics revealed that Mg-ion implanted layers consisted of uniform p-type crystalline area and localized crystal defects having n-type conduction. The Sample showed low-temperature PL spectra quite similar to this observed from Mg-doped MOVPE grown p-type GaN. p-n diodes fabricated by the Mg-ion implantation showed clear rectifying I-V characteristics.Key Words : GaN, free-standing GaN substrate, Mg ion implantation
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http://repo.lib.hosei.ac.jp/bitstream/10114/13543/1/15R3130.pdf

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