Departmental Bulletin Paper RFマグネトロンスパッタ法により形成した Al2O3添加 CeO2 薄膜の電気特性

小西, 順也

The Al2O3 incorporated CeO2 thin films (Al2O3 molar fraction of 0.0 to 0.6) were prepared using the RF magnetron sputtering apparatus with the combinatorial mask system having two targets of Al2O3 and CeO2 in Ar + 10% O2. The combinatorial composition spread sample was divided into two pieces, one for N2 annealing and the other for O2 annealing. Both pieces were annealed at 500 °C for 30 minutes. Theminimum leakage current density of 1.6 x 10-8 A/cm2 at the electric field of -1 MV/cm was obtained for the N2 annealed sample with the Al2O3 incorporation with the molar fraction of 0.2. The obtained value was lower than that of the film without Al2O3 incorporation by two orders of magnitude.Key Words : sputtering, CeO2, Al2O3, high-k, C-V, I-V

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