紀要論文 p 型 GaN へのオーミック接触 に関する研究

小田, 惟巧

582017-03-31 , 法政大学大学院理工学・工学研究科
ISSN:21879923
NII書誌ID(NCID):AA12677220
内容記述
Ohmic contact to p-type gallium nitride (GaN) layer after dry etching and film deposition processes was investigated. Contact resistance between n-type layer and Ti/Al electrode is extremely low. But contact reisitance between p-type GaN layer to Pd became high, since p-type GaN surface was sensitive for device fabrication process which included dry-etching, sputtering and evaporation. Relatively low contact resistance after film deposition of SiN using Cat-CVD process was obtained.Key Words : GaN, Ohmic contact, film deposition,
本文を読む

http://repo.lib.hosei.ac.jp/bitstream/10114/13521/1/15R3108.pdf

このアイテムのアクセス数:  回

その他の情報