紀要論文 p 型 GaN へのオーミック接触 に関する研究

小田, 惟巧

内容記述
Ohmic contact to p-type gallium nitride (GaN) layer after dry etching and film deposition processes was investigated. Contact resistance between n-type layer and Ti/Al electrode is extremely low. But contact reisitance between p-type GaN layer to Pd became high, since p-type GaN surface was sensitive for device fabrication process which included dry-etching, sputtering and evaporation. Relatively low contact resistance after film deposition of SiN using Cat-CVD process was obtained.Key Words : GaN, Ohmic contact, film deposition,
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http://repo.lib.hosei.ac.jp/bitstream/10114/13521/1/15R3108.pdf

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