紀要論文 分子吸着によるエピタキシャルグラフェンの界面構造・電子構造の変調

中本, 圭亮

57pp.1 - 2 , 2016-03-24 , 法政大学大学院 理工学・工学研究科
ISSN:21879923
内容記述
Epitaxial graphene(EG) grown on a SiC substrate attracts much attention as a typical large-area high quality graphene sample, which is important in graphene research for spectroscopy and reactivity with other chemical species. EG consists of graphene layers and buffer layer which is partially bonded to bulk SiC substrate, and influences graphene layers through the interface interaction such as charge transfer and strain. In this study, we examined the interface structure and the electronics structure of EG, and its modulation by molecular adsorption by X-ray photoelectron spectroscopy, Raman spectroscopy and Infrared spectroscopy. Key Words : Epitaxial graphene, Molecular adsorption, Interface
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http://repo.lib.hosei.ac.jp/bitstream/10114/13012/1/14R2122%e4%b8%ad%e6%9c%ac%e5%9c%ad%e4%ba%ae.pdf

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