紀要論文 水素イオン注入 KNbO 3 バルク単結晶の低抵抗化と永続光伝導

新川, 輝

内容記述
Origins of low resistivity in H-ion implanted KNbO 3 bulk single crystals are studied by elastic recoil detection analysis and Van der Pauw methods. After the H-ion implantation, the sheet resistance decreased by three orders of magnitude to 2.3×10 5/□. The hydrogen concentration near the surface estimated is 5.1×10 14 cm-2 for un-implanted, 5.6×10 14 cm-2 for as-implanted, 3.4×10 14 cm-2 for 150ºC annealedsamples, respectively, indicating that a part of hydrogen is diffused out by annealing. The low resistive layer induced in H-ion implanted KNbO 3 suggests the existence of a shallow energy level related to the complex defect consisting of hydrogen interstitial and the proton induced defect such as oxygen vacancy. Persistent photoconductivity was observed in H-ion implanted KNbO 3 bulk single crystals by excitation using LEDs with various wavelengths. Key Words : Potassium Niobate, hydrogen, elastic recoil detection analysis, persistent photoconductivity
本文を読む

https://hosei.repo.nii.ac.jp/?action=repository_action_common_download&item_id=13042&item_no=1&attribute_id=22&file_no=1

このアイテムのアクセス数:  回

その他の情報