562015-03-24 , 法政大学大学院理工学・工学研究科
Praseodymium oxide thin films were fabricated on p-type Si (100) substrates by the reactive RF magnetron sputtering with a metal Pr target in Ar + 10 % O2. Deposited films were post-annealed in an ambient of nitrogen (N2) for 30 minutes at temperatures of 300, 500 and 800 °C. The Pr oxide film consisting of the mixture of Pr2O3 and Pr6O11 was crystallized before annealing. The TEM observation revealed the presence of the SiO2 layer at the interface between the film and the Si substrate. The interfacial SiO2 layer was scavenged in the course of the post-annealing up to 500 °C. After annealing at 800 °C, the Pr2O3 columnar structure was found to be completely rearranged to the layered structure consisting of the uniform Pr silicate and Pr2O3 grains.