Departmental Bulletin Paper O2導入Arスパッタ法により形成したAl添加CeO2薄膜の特性評価
EVALUATON OF PROPERTIES OF Al DOPED CeO2 THIN FILMS DEPOSITED BY O2 INTRODUCED RF MAGNETRON SPUTTERING

野谷, 祐貴  ,  NOTANI, Yuki

(56) 2015-03-24 , 法政大学大学院理工学・工学研究科
ISSN:2187-9923
NCID:AA12677220
Description
Cerium dioxide films doped with Al were deposited on p-type Si (100) wafers by radio frequency (RF) magnetron sputtering. The deposition was carried out at room temperature in an Ar +O2 atmosphere using the CeO2 target on which Al plates were bonded. Flow rate ratio of O2 was 2, 5 and 10 %. The post annealing was performed in an N2 atmosphere at 200 -600 °C. The electrical properties after annealing were characterized by I-V and C-V measurements. The leakage current at 3 MV/cm was minimized bellow 1.0×10-7 A/cm2for the sample deposited with 2 and 5% O2 introduction and annealed at 200 °C. The dielectric constant was increased with increasing amount of introduced O2. The leakage current and the dielectric constant were almost independent of the annealing temperature, but after annealing at 400 °C the leakage current increased by 3 orders of magnitude while dielectric constant decreased exceptionally. The transmission electron microscope, X-ray diffraction and X-ray photoelectron spectroscopy observations suggested the phase transition at this temperature.
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http://repo.lib.hosei.ac.jp/bitstream/10114/10452/1/13R3145.pdf

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