Departmental Bulletin Paper 自立GaN基板上のイオン注入縦型バイポーラトランジスタの高性能化に関する研究
IMPROVE PERFORMANCE OF ION‐IMPLANTED VERTICAL BIPOLAR TRANSISTOR ON FREE‐STANDING GaN SUBSTRATES

髙橋, 賢伍  ,  TAKAHASHI, Kengo

(56) 2015-03-24 , 法政大学大学院理工学・工学研究科
ISSN:2187-9923
NCID:AA12677220
Description
This paper describes method improvement performance of ion-implanted vertical bipolar junction transistor (BJT) on free-standing gallium nitride (GaN) substrates. This BJT consists of emitter region that is fabricated by Si-ion implantation. We achieved grounded emitter current amplification factor of 6. But, base region’s contact resistance was high and base contact became schottky contact.So, we research optimal conditions for ohmic contact of base electrode and found out best method of formation that is Ni electrode with 400 oC alloy.
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http://repo.lib.hosei.ac.jp/bitstream/10114/10442/1/13R3135.pdf

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