FORMATION OF CeO2/SiO2 COMPOSITE OXIDE FILMS BY MOCVD WITH TEOS INTRODUCTION
佐藤, 友亮SATO, Tomoaki
562015-03-24 , 法政大学大学院理工学・工学研究科
Thin films of CeO2/SiO2composite oxide films have been deposited on p-type(100)silicon wafer by means of the metal organic chemical vapor deposition (MOCVD)using tetrakis(3-methyl-3-pentoxy) cerium(Ce[OC(C2H5)2CH3]4)with and without tetraethyl or thosilicate(TEOS)vapor introduction. The CeO2films with TEOS were made use of the hydrolysis by H2O that arose during deposition of CeO2. The deposition pressure, time, and temperaturewere50Pa, 30minute,and 350°C, respectively. TEOS was introduced for 5 s or10 s every3 min. The post-annealing was performed at 500°Cfor 30min in the ambient of air. Silicon atoms were detected uniformly in the CeO2thin films deposited with TEOS introduction in spite of the intermittent TEOS introduction by X-ray Photoelectron Spectroscopy(XPS). The X‐ray diffraction(XRD)measurement revealed the suppression of crystallization by TEOS introduction; the CeO2(111)peak intensity weakened and CeO2 (200) andCeO2 (220) peaks disappeared. The TED patterns represented only the amorphous ring in the samples with TEOS introduction.