紀要論文 TEOS導入MOCVD法によるCeO2/SiO2複合酸化膜の形成
FORMATION OF CeO2/SiO2 COMPOSITE OXIDE FILMS BY MOCVD WITH TEOS INTRODUCTION

佐藤, 友亮  ,  SATO, Tomoaki

(56) 2015-03-24 , 法政大学大学院理工学・工学研究科
ISSN:2187-9923
NII書誌ID(NCID):AA12677220
内容記述
Thin films of CeO2/SiO2composite oxide films have been deposited on p-type(100)silicon wafer by means of the metal organic chemical vapor deposition (MOCVD)using tetrakis(3-methyl-3-pentoxy) cerium(Ce[OC(C2H5)2CH3]4)with and without tetraethyl or thosilicate(TEOS)vapor introduction. The CeO2films with TEOS were made use of the hydrolysis by H2O that arose during deposition of CeO2. The deposition pressure, time, and temperaturewere50Pa, 30minute,and 350°C, respectively. TEOS was introduced for 5 s or10 s every3 min. The post-annealing was performed at 500°Cfor 30min in the ambient of air. Silicon atoms were detected uniformly in the CeO2thin films deposited with TEOS introduction in spite of the intermittent TEOS introduction by X-ray Photoelectron Spectroscopy(XPS). The X‐ray diffraction(XRD)measurement revealed the suppression of crystallization by TEOS introduction; the CeO2(111)peak intensity weakened and CeO2 (200) andCeO2 (220) peaks disappeared. The TED patterns represented only the amorphous ring in the samples with TEOS introduction.
本文を読む

http://repo.lib.hosei.ac.jp/bitstream/10114/10437/1/13R3130.pdf

このアイテムのアクセス数:  回

その他の情報