Departmental Bulletin Paper イオン注入GaN-MISFETの高性能化に関する研究
THE CHARACTERISTICS IMPROVEMENT OF ION-IMPLANTED GAN MISFETS

葛西, 駿  ,  KASAI, Hayao

法政大学大学院紀要 理工学・工学研究科編
562015-03-24 , 法政大学大学院理工学・工学研究科
ISSN:21879923
NCID:AA12677220
Description
This paper demonstrates the impact of tilted Mg ion implantation for the threshold voltage control of GaN MISFETs for the first time. The threshold voltage of the MISFETs by using Mg implantation shifts up to 1.5 V, whereas that without Mg ion implantation is about -5 V. The GaN MISFET achieved maximum drain current of 165 mA/mm and an extrinsic transconductance of 30 mS/mm. These results indicate a definite availability of our process in normally-off GaN MISFETs for power switching device applications
Full-Text

http://repo.lib.hosei.ac.jp/bitstream/10114/10429/1/13R3122.pdf

Number of accesses :  

Hosei University Repository
GO

Other information