Departmental Bulletin Paper イオン注入GaN-MISFETの高性能化に関する研究

葛西, 駿

562015-03-24 , 法政大学大学院理工学・工学研究科
This paper demonstrates the impact of tilted Mg ion implantation for the threshold voltage control of GaN MISFETs for the first time. The threshold voltage of the MISFETs by using Mg implantation shifts up to 1.5 V, whereas that without Mg ion implantation is about -5 V. The GaN MISFET achieved maximum drain current of 165 mA/mm and an extrinsic transconductance of 30 mS/mm. These results indicate a definite availability of our process in normally-off GaN MISFETs for power switching device applications

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