Departmental Bulletin Paper T型微細ゲートGaN-HEMTの高性能化に関する研究
THE GATE ELECTRODE LENGTH SCALING OF GaNHEMT WITH T-GATE ELECTRODE

岡田, 裕太郎  ,  OKADA, Yutaro

(56) 2015-03-24 , 法政大学大学院理工学・工学研究科
ISSN:2187-9923
NCID:AA12677220
Description
This paper describes method improvement of gate electrode formation and injector region formation of gallium nitride high electron mobility transistor on sapphire substrate by Electron Beam Lithography Exposure.We archived gate electrode length of 30nm and Lsg=0.4μm by changing the developing fluid ,development temperature and Dosetime (exposure time per dot) of Electron Beam Lithography.
Full-Text

http://repo.lib.hosei.ac.jp/bitstream/10114/10401/1/13R3116.pdf

Number of accesses :  

Other information