562015-03-24 , 法政大学大学院理工学・工学研究科
P-type conversion of n--GaN by Mg-ion implantation was successfully performed using high quality GaN epitaxial layers grown on free-standing low-dislocation-density GaN substrates. These samples showed low-temperature PL spectra quite similar to those observed from Mg-doped MOVPE-grown p-type GaN, consisting of Mg related donor–acceptor pair (DAP) and acceptor bound exciton (ABE) emission. P-n diodes fabricated by the Mg-ion implantation showed clear rectifying I-V characteristics and UV and blue-green light emissions were observed at forward biased conditions for the first time. Van der Pauw measurements for the Mg-implanted GaN layers showed positive Hall coefficients.