Journal Article Large As sublattice distortion in sphalerite ZnSnAs2 thin films revealed by x-ray fluorescence holography

Hayashi, Kouichi  ,  Uchitomi, Naotaka  ,  Yamagami, Keitaro  ,  Suzuki, Akiko  ,  Yoshizawa, Hayato  ,  T. Asubar, Joel  ,  Happo, Naohisa  ,  Hosokawa, Shinya  ,  ハヤシ, コウイチ  ,  ウチトミ, ナオタカ  ,  ヤマガミ, ケイタロウ  ,  スズキ, アキコ  ,  ヨシザワ, ハヤト  ,  ハッポウ, ナオヒサ  ,  ホソカワ, シンヤ  ,  細川, 伸也

119p.125703 , 2016-03-30 , AIP Publishing
The structure of a ZnSnAs2 thin film epitaxially grown on an InP substrate was evaluated using x-ray fluorescence holography. The reconstructed three-dimensional atomic images clearly show that the crystal structure of the ZnSnAs2 thin film is mainly of the sphalerite type, in contrast to the bulk form. A large disordering of the As layers is observed, whereas the positions of the Zn/Sn atoms are relatively stable. The analysis of the data indicates that the As layers serve as a buffer and relax the strain caused by the random occupation of Zn and Sn atoms. These results provide further understanding and a means of controlling the growth of Mn-doped ZnSnAs2, a high-Tc diluted magnetic semiconductor.

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