Departmental Bulletin Paper 原子層エピタキシー法によって作製されたGaAsN薄膜の作製条件の違いが結晶性に与える影響のラマン分光法による評価

橋本, 英明  ,  和田, 季己  ,  横山, 祐貴  ,  前田, 幸治  ,  鈴木, 秀俊

46pp.113 - 116 , 2017-07-31 , 宮崎大学工学部
ISSN:05404924
Description
Effects of growth conditions in GaAsN films prepared by atomic layer epitaxy have been evaluated using Raman spectroscopy. The Raman spectrum ware fitted to the LO and TO modes using the Lorentz function. The crystallinity was evaluated from the full width at half maximum of LO peak and the area intensity ratio of LO and TO peak. Crystallinity deteriorated with increasing in the growth temperature. The crystallinity was improved as the results of increasing the film thickness and decreasing of the gas supply duration. The growth temperature at 480 °C had the best crystallinity in GaAsN films.
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