紀要論文 液滴エピタキシー法により作製したGaAs QDs の発光再結合特性

岩元, 杏里  ,  石塚, 史典  ,  大堀, 大介  ,  間野, 高明  ,  碇, 哲雄  ,  福山, 敦彦

46pp.85 - 88 , 2017-07-31 , 宮崎大学工学部
ISSN:05404924
内容記述
We investigated a radiative recombination in the self-assembled GaAs quantum dots (QDs) structure embedded by Al0.33Ga0.67As barrier material on the GaAs (311)A substrates formed by a droplet epitaxy method by using photoluminescence (PL) method. The quantum-well layer was inserted under the QDs structure to thicken the QDs height; hereafter we called an effective height (EH). The PL peak originated from QDs showed red-shift and increase in the signal intensity with increasing the thickness of EH. A full width at half maximum also narrowed. As the results, the radiative recombination within the inserted quantum well became dominant. From the temperature dependent PL measurements, the temperature coefficient estimated from the PL peak energy between 60 and 140 K for the QDs sample without quantum-well layer was steeper than thick EH samples. This implied that QDs had a considerable variation in the diameter. Since a QD with large diameter has a weak carrier confinement to lateral direction, photo- enerated carriers can escape from QDs and recombine within quantum-well layer. It is concluded that radiative recombination within quantum-well layer was dominant because of weak carrier confinement of present QD.
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