Departmental Bulletin Paper フォトルミネッセンス法による加工 Si 基板上半極性 (1-101) 面 GaN薄膜の発光再結合特性評価
Investigation of Radiative Recombination of Semi-Polar (1-101)GaN Films Grown on Patterned (001)Si Substrate

杉原, 圭二  ,  中野, 真理菜  ,  岩元, 杏里  ,  大堀, 大介  ,  本田, 善央  ,  天野, 浩  ,  碇, 哲雄  ,  福山, 敦彦

45pp.105 - 109 , 2016-07-31 , 宮崎大学工学部
We investigated the radiative recombination properties of semi-polar (11̅01)GaN films grown on patterned (001)Si substrate by using photoreflectance (PR) and photoluminescence (PL) spectroscopies. The X-ray diffraction (XRD) method was also used for investigating strain content. Estimated bandgap energy (Eg) by Kramers-Kronig transformation of PR spectrum showed about 35 meV lower energy side than that of polar (0001)GaN. It was found that the strain of growth direction (=[111]Si) did not exist from the XRD 2- scan. Therefore, reduction of Eg may be caused by the tensile strain along the [11̅0]Si or [112̅-]Si direction. From the low temperature PL and PR measurements, we could confirm the several radiative peaks caused by donor-bound exciton, acceptor-bound exciton, and donor-to-acceptor pair recombination.

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