Fabrication and Luminescence Properties of Thin Film Phosphor Prepared by RF Magnetron Sputtering Method
藤原, 光二郎 ,
蛯原, 正裕 ,
横山, 宏有前田, 幸治
94 , 2016-07-31 , 宮崎大学工学部
The crystalline Sr(Al2Si2O8) films on quartz glass substrate were grown by a RF magnetron sputtering method. Al2O3 and SrAl2O4 powder were used for the targets. The crystalized Al2O3 buffer layer needs to crystalize the thin film on quartz glass substrate. The deposited thin film was annealed at 1150℃ in H2/Ar gas for the improvement the crystallinity. The annealed film were identified a mixed phases of both crystalline SiO2 and Sr(Al2Si2O8). The existence of Eu2+ and Eu3+ ions in the films were confirmed by photoluminescence emission of broad peak at 380 nm and that of weak peaks at about 600 nm respectively. These results indicated that the embedded Al2O3 buffer layers and the annealing treatments were important in the emission of Eu2+ ions in Sr(Al2Si2O8) film.