||原料ガス断続供給法による Au を触媒とした GaAsナノワイヤの作製
Synthesis of Au-assisted GaAs Nanowires on Si Substrate by Pulsed-jet Epitaxy Method
上村, 健二 ,
仲川, 豪志 ,
前田, 幸治 ,
鈴木, 秀俊境, 健太郎
77 , 2016-07-31 , 宮崎大学工学部
GaAs nanowires (NWs) assisted Au catalyst on the Si (111) substrate have been synthesized by employing the pulsed-jet epitaxy method. The effect of growth conditions was evaluated by changing the formation and the growth direction of the NWs. Increasing the Au droplet diameter, the number density of NWs reduced and the length of NWs became longer. In the higher growth temperature, the distribution of the growth direction on the nanowire axis was small, and the NWs grow to perpendicular direction to a substrate. However, the desorption of As restrain the growth of NWs more than 550 ℃.