Journal Article Wavelength dependence of silicon avalanche photodiode fabricated by CMOS process

Mohammed Napiah, Zul Atfyi Fauzan  ,  Hishiki, Takuya  ,  Iiyama, Koichi

92pp.193 - 197 , 2017-07-01 , Elsevier
ISSN:0030-3992
NCID:AA00764816
Description
Avalanche photodiodes fabricated by CMOS process (CMOS-APDs) have features of high avalanche gain below 10 V, wide bandwidth over 5 GHz, and easy integration with electronic circuits. In CMOS-APDs, guard ring structure is introduced for high-speed operation by canceling photo-generated carriers in the substrate at the sacrifice of the responsivity. We describe here wavelength dependence of the responsivity and the bandwidth of the CMOS-APDs with shorted and opened guard ring structure. © 2017 Elsevier Ltd
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http://dspace.lib.kanazawa-u.ac.jp/dspace/bitstream/2297/47080/1/TE-PR-IIYAMA-K-193.pdf

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